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| MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MDC5001T1/D Low Voltage Bias Stabilizer with Enable * Maintains Stable Bias Current in N-Type Discrete Bipolar Junction and Field Effect Transistors * Provides Stable Bias Using a Single Component Without Use of Emitter Ballast and Bypass Components * Operates Over a Wide Range of Supply Voltages Down to 1.8 Vdc * Reduces Bias Current Variation Due to Temperature and Unit-to-Unit Parametric Changes * Consumes * Active High Enable is CMOS Compatible This device provides a reference voltage and acts as a DC feedback element around an external discrete, NPN BJT or N-Channel FET. It allows the external transistor to have its emitter/source directly grounded and still operate with a stable collector/drain DC current. It is primarily intended to stabilize the bias of discrete RF stages operating from a low voltage regulated supply, but can also be used to stabilize the bias current of any linear stage in order to eliminate emitter/source bypassing and achieve tighter bias regulation over temperature and unit variations. The "ENABLE" polarity nulls internal current, Enable current, and RF transistor current in "STANDBY." This device is intended to replace a circuit of three to six discrete components. The combination of low supply voltage, low quiescent current drain, and small package make the MDC5001T1 ideal for portable communications applications such as: * Cellular Telephones * Pagers * PCN/PCS Portables * GPS Receivers * PCMCIA RF Modems * Cordless Phones * Broadband and Multiband Transceivers and Other Portable Wireless Products MAXIMUM RATINGS Rating Power Supply Voltage Ambient Operating Temperature Range Storage Temperature Range Junction Temperature Collector Emitter Voltage (Q2) Enable Voltage (Pin 5) Symbol VCC TA Tstg TJ VCEO VENBL Value 15 -40 to +85 -65 to +150 150 -15 VCC Unit Vdc C C C V V MDC5001T1 SILICON SMALLBLOCKTM INTEGRATED CIRCUIT t 0.5 mW at VCC = 2.75 V 6 5 4 1 2 3 CASE 419B-01, Style 19 SOT-363 INTERNAL CIRCUIT DIAGRAM VCC (4) R1 Q1 R2 Vref (6) Q2 VENBL (5) R5 R4 Q4 R6 Iout (1) R3 GND (2) and (3) THERMAL CHARACTERISTICS Characteristic Total Device Power Dissipation (FR-5 PCB of 1 x 0.75 x 0.062, TA = 25C) Derate above 25C Thermal Resistance, Junction to Ambient SMALLBLOCK is a trademark of Motorola, Inc. Symbol PD 150 1.2 RJA 833 Max Unit mW mW/C C/W REV 1 Motorola Small-Signal Transistors, FETs and Diodes Device Data (c) Motorola, Inc. 1997 1 MDC5001T1 ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) Characteristic Recommended Operating Supply Voltage Power Supply Current (VCC = 2.75 V) Vref, Iout are unterminated See Figure 8 Q2 Collector Emitter Breakdown Voltage (IC2 = 10 A, IB2 = 0) Reference Voltage (VENBL = VCC = 2.75 V, Vout = 0.7 V) (Iout = 30 A) (Iout = 150 A) See Figure 1 Reference Voltage (VENBL = VCC = 2.75 V, Vout = 0.7 V, -40C TA +85C) VCC Pulse Width = 10 mS, Duty Cycle = 1% (Iout = 10 A) (Iout = 30 A) (Iout = 100 A) See Figures 2 and 11 Symbol VCC ICC Min 1.8 -- Typ 2.75 130 Max 10 200 Unit Volts A V(BR)CEO2 Vref 15 Volts Volts 2.050 2.110 2.075 2.135 2.100 2.160 DVref 5.0 15 25 10 30 50 mV The following SPICE models are provided as a convenience to the user and every effort has been made to insure their accuracy. However, no responsibility for their accuracy is assumed by Motorola. .MODEL Q4 NPN BF = 136 BR = 0.2 CJC = 318.6 f CJE = 569.2 f CJS = 1.9 p EG = 1.215 FC = 0.5 IKF = 24.41 m IKR = 0.25 IRB = 0.0004 IS = 256E-18 ISC = 1 f ISE = 500E-18 ITF = 0.9018 MJC = 0.2161 MJE = 0.3373 MJS = 0.13 NC = 1.09 NE = 1.6 NF = 1.005 RB = 140 RBM = 70 RC = 180 RE = 1.6 TF = 553.6 p TR = 10 n VAF = 267.6 VAR = 12 VJC = 0.4172 VJE = 0.7245 VJS = 0.39 VTF = 10 XTB = 1.5 XTF = 2.077 XTI = 3 .MODEL Q1, Q2 PNP BF = 87 BR = 0.6 CJC = 800E-15 CJE = 46E-15 EG = 1.215 FC = 0.5 IKF = 3.8E-04 IKR = 2.0 IRB = 0.9E-3 IS = 1.027E-15 ISC = 10E-18 ISE = 1.8E-15 ITF = 2E-3 MJC = 0.2161 MJE = 0.2161 NC = 0.8 NE = 1.38 NF = 1.015 NK = 0.5 NR = 1.0 RB = 720 RBM = 470 RC = 180 RE = 26 TF = 15E-9 TR = 50E-09 VAF = 54.93 VAR = 20 VAR = 20 VJC = 0.4172 VJE = 0.4172 VTF = 10 XTB = 1.5 XTF = 2.0 XTI = 3 RESISTOR VALUES R1 = 12 K R2 = 6 K R3 = 3.4 K R4 = 12 K R5 = 20 K R6 = 40 K These models can be retrieved electronically by accessing the Motorola Web page at http://design-net.sps.mot.com/models and searching the section on SMALLBLOCKTM models 2 Motorola Small-Signal Transistors, FETs and Diodes Device Data MDC5001T1 TYPICAL OPEN LOOP CHARACTERISTICS 10 = 1000 m A = 500 m A = 100 m A = 10 mA Iout Iout Iout Iout 6 V ENBL = VCC TJ = 25C 8 7 6 5 4 3 2 1 7 8 9 0 0 1 2 3 4 V CC , SUPPLY VOLTAGE (Vdc) 5 Figure 1. Vref versus VCC @ Iout Motorola Small-Signal Transistors, FETs and Diodes Device Data Vref (Vdc) 3 MDC5001T1 TYPICAL OPEN LOOP CHARACTERISTICS (Refer to Circuits of Figures 10 through 15) 50 40 30 20 V ref (mV) 10 0 -10 -20 -30 -40 -50 -45 -35 -25 -15 -5 5 15 25 35 45 55 TJ, JUNCTION TEMPERATURE (C) Iout = 10 mA ICC , SUPPLY CURRENT ( m Adc) VCC = 2.75 Vdc VENBL = VCC Iout = 500 mA Iout = 100 mA Iout = 30 mA 900 800 700 600 500 400 300 200 100 65 75 85 0 0 1 2 3 4 5 6 7 VCC, SUPPLY VOLTAGE (Vdc) 8 9 10 TJ = 85C TJ = 25C VENBL = VCC TJ = -40C Figure 2. DVref versus TJ @ Iout 1000 500 H FE , Q2 DC CURRENT GAIN 300 200 100 50 30 20 10 10 VCE2 = Vout - Vref = -1.5 Vdc 20 30 50 100 200 300 Iout, DC OUTPUT CURRENT (mAdc) 500 1000 TJ = -40C TJ = 25C TJ = 85C IENABLE (m Adc) 160 140 120 100 80 60 40 20 0 0 Figure 3. ICC versus VCC @ TJ VCC = 2.75 Vdc Iref = 30 mA TJ = -40C TJ = 25C TJ = 85C 0.5 1.0 1.5 2.0 VENABLE (Vdc) 2.5 3.0 Figure 4. Q2 Current Gain versus Output Current @ TJ 6.0 VCC = 5.0 Vdc 5.0 4.0 Vref , (Vdc) 3.3 Vdc 3.0 2.0 1.0 2.75 Vdc 1.8 Vdc Figure 5. Ienable versus Venable Iout = 500 mA Iout = 30 mA TJ = 25C MIN VENBL FOR STABLE Vref @ VCC 0 0 0.5 1.0 1.5 2.0 2.5 3.0 Venable (Vdc) 3.5 4.0 4.5 5.0 Figure 6. Vref versus Venable @ VCC and Iout 4 Motorola Small-Signal Transistors, FETs and Diodes Device Data MDC5001T1 TYPICAL CLOSED LOOP PERFORMANCE (Refer to Circuits of Figures 16 & 17) 1.5 1.0 0.5 IC3 = 15 mA IC3 = 10 mA V ref (%) IC3 = 3 mA VCC = 2.75 Vdc VENBL = VCC 4.0 3.0 2.0 1.0 0 -1.0 IC3 = 1 mA -2.0 -3.0 65 75 85 0 VCC = 2.75 Vdc VENBL = VCC TA = 25C 50 100 150 200 250 EXTERNAL TRANSISTOR DC BETA @ IC3 300 IC3 = 15 mA IC3 = 10 mA IC3 = 3 mA IC3 = 1 mA D IC 3 (%) 0 -0.5 -1.0 -1.5 -2.0 -45 -35 -25 -15 -5 5 15 25 35 45 55 TA, AMBIENT TEMPERATURE (C) Figure 7. DIC3 versus TA @ IC3 10 VCC = 2.75 Vdc VENBL = VCC TA = 25C Figure 8. DVref versus External Transistor DC Beta @ IC3 5.0 D I C 3 (%) 0 -5.0 IC3 = 15 mA IC3 = 10 mA IC3 = 3 mA IC3 = 1 mA 0 50 100 150 200 250 HFE, EXTERNAL TRANSISTOR DC BETA 300 -10 -15 Figure 9. DIC3 versus External Transistor DC Beta @ IC3 Motorola Small-Signal Transistors, FETs and Diodes Device Data 5 MDC5001T1 OPEN LOOP TEST CIRCUITS ICC ICC VCC (4) VCC (4) Q1 Q1 ENABLE (5) Vref (6) Q2 MDC5001 + Q4 Iout VCC GND (2) & (3) GND (2) & (3) + VBE3 = 0.7 V A V Vref Iout (1) Iout Iref ENABLE (5) Vref (6) Q2 Iout (1) MDC5001 + Q4 VCC See NOTE 1 Figure 10. ICC versus VCC Test Circuit Figure 11. Vref versus VCC Test Circuit VCC (4) VCC (4) Q1 IB Vref (6) ENABLE (5) Iref V Vref A GND (2) & (3) Q4 Q1 ENABLE (5) Vref (6) Q2 MDC5001 Iout (1) Iout A Iout Q2 MDC5001 Iout (1) Iout Iout + VCC = 2.75 V GND (2) & (3) Q4 VBE3 = 0.7 V + 1.5 V + See NOTE 1 Figure 12. Vref versus TJ Test Circuit Figure 13. HFE versus Iout Test Circuit VCC (4) + + VCC = 2.75 V ENABLE (5) IENBL A + Q1 VCC Vref (6) Q2 MDC5001 Q4 Iout (1) Iout Iref = 30 mA ENABLE (5) + VCC (4) Q1 Vref (6) Q2 MDC5001 Q4 Iout (1) Iout Vref + V Iout A + VBE3 = 0.7 V Iref VENBL VENBL + GND (2) & (3) VBE3 = 0.7 V GND (2) & (3) See NOTE 1 Figure 14. IENBL versus VENBL Test Circuit Figure 15. Vref versus VENBL Test Circuit NOTE 1: VBE3 is used to simulate actual operating conditions that reduce VCE2 & HFE2, and increase IB2 & Vref. 6 Motorola Small-Signal Transistors, FETs and Diodes Device Data MDC5001T1 CLOSED LOOP TEST CIRCUITS VCC (4) A IC3 Q1 Vref (6) ENABLE (5) Q2 MDC5001 + VCC = 2.75 V Q4 Iout (1) A Iout V Vref VBE3 Q3 GND (2) & (3) Figure 16. Vref and RF Stage IC3 versus HFE3 Test Circuit VCC (4) A IC3 Q1 Vref (6) ENABLE (5) Q2 MDC5001 + VCC = 2.75 V Q4 0.1 mF 100 pF 0.018 mF GND (2) & (3) NOTE: External R-Cs used to Maintain Broadband Stability of MRF941 51 100 pF 0.018 mF Iout (1) 1K VBE3 Q3 MRF941 HFE = 113 51 Figure 17. RF Stage IC3 versus TA Test Circuit Motorola Small-Signal Transistors, FETs and Diodes Device Data 7 MDC5001T1 APPLICATION CIRCUITS VCC (4) REGULATED VCC = 2.75 Vdc IC3 = 3 mAdc Q1 R5 240 W ENABLE (5) VENBL + Q4 Vref (6) Q2 MDC5001 Iout (1) Vref = 2.025 Vdc 470 pF 180 1K Iout 30 nH 18 nH Q3 MRF9411 Typ RF OUT VCC = 2.75 V GND (2) & (3) 470 pF RF IN 8.0 nH 9 pF 5-STEP DESIGN PROCEDURE Step 1: Step 2: Step 3: Step 4: Step 5: Choose VCC (1.8 V Min to 10 V Max) Insure that Min VENBL is minimum indicated in Figures 5 and 6. Choose bias current, IC3, and calculate needed Iout from typ HFE3 From Figure 1, read Vref for VCC and Iout calculated. Calculate Nominal R5 = (VCC - Vref) (IC3 + Iout). Tweak as desired. Figure 18. Class A Biasing of a Typical 900 MHz BJT Amplifier Application VCC (4) REGULATED VCC = 2.75 Vdc ID = 15 mAdc R5 43 W RFC Q1 ENABLE (5) VENBL + Q4 VCC = 2.75 V Vref (6) Q2 MDC5001 Iout (1) Vref = 2.085 Vdc 1000 pF 6.8 nH 2.7 pF 1K RF OUT R6 22 K + EGS 5 Vdc Q3 MRF9811 Typ Iout RF IN GND (2) & (3) 12.5 nH 1000 pF 6.1 pF 7-STEP DESIGN PROCEDURE Choose VCC (1.8 V Min to 10 V Max) Insure that Min VENBL is minimum indicated in Figures 5 and 6. Choose bias current, ID, and determine needed gate-source voltage, VGS. Choose Iout keeping in mind that too large an Iout can impair MDC5000 DVref/DTJ performance (Figure 2) but too large an R6 can cause IDGO & IGSO to bias on the FET. Step 5: Calculate R6 = (VGS + EGS) Iout Step 6: From Figure 1, read Vref for VCC & Iout chosen Step 7: Calculate Nominal R5 = (VCC - Vref) (ID + Iout). Tweak as desired. Step 1: Step 2: Step 3: Step 4: Figure 19. Class A Biasing of a Typical 890 MHz Depletion Mode GaAs FET Amplifier 8 Motorola Small-Signal Transistors, FETs and Diodes Device Data MDC5001T1 PACKAGE DIMENSIONS A G V NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. DIM A B C D G H J K N S V INCHES MIN MAX 0.071 0.087 0.045 0.053 0.031 0.043 0.004 0.012 0.026 BSC --- 0.004 0.004 0.010 0.004 0.012 0.008 REF 0.079 0.087 0.012 0.016 MILLIMETERS MIN MAX 1.80 2.20 1.15 1.35 0.80 1.10 0.10 0.30 0.65 BSC --- 0.10 0.10 0.25 0.10 0.30 0.20 REF 2.00 2.20 0.30 0.40 6 5 4 S 1 2 3 -B- D 6 PL 0.2 (0.008) M B M N J C STYLE 19: PIN 1. I OUT 2. GND 3. GND 4. V CC 5. V EN 6. V REF H K CASE 419B-01 ISSUE G P P DIM L P S W INCHES MIN MAX 0.035 0.026 BSC 0.063 NOM 0.014 NOM MILLIMETERS MIN MAX 0.9 0.65 BSC 1.6 NOM 0.34 NOM S L W STYLE 19: PIN 1. I OUT 2. GND 3. GND 4. V CC 5. V EN 6. V REF Motorola Small-Signal Transistors, FETs and Diodes Device Data 9 MDC5001T1 Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. "Typical" parameters which may be provided in Motorola data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. Motorola does not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such unintended or unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part. Motorola and are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer. Mfax is a trademark of Motorola, Inc. How to reach us: USA / EUROPE / Locations Not Listed: Motorola Literature Distribution; P.O. Box 5405, Denver, Colorado 80217. 1-303-675-2140 or 1-800-441-2447 Customer Focus Center: 1-800-521-6274 MfaxTM: RMFAX0@email.sps.mot.com - TOUCHTONE 1-602-244-6609 ASIA/PACIFIC: Motorola Semiconductors H.K. Ltd.; 8B Tai Ping Industrial Park, Motorola Fax Back System - US & Canada ONLY 1-800-774-1848 51 Ting Kok Road, Tai Po, N.T., Hong Kong. 852-26629298 - http://sps.motorola.com/mfax/ HOME PAGE: http://motorola.com/sps/ JAPAN: Nippon Motorola Ltd.: SPD, Strategic Planning Office, 4-32-1, Nishi-Gotanda, Shinagawa-ku, Tokyo 141, Japan. 81-3-5487-8488 10 Motorola Small-Signal Transistors, FETs and Diodes MDC5001T1/D Device Data |
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